Plasmonic organic photovoltaic devices with graphene based buffer layers for stability and efficiency enhancement.
Identifieur interne : 000466 ( Main/Exploration ); précédent : 000465; suivant : 000467Plasmonic organic photovoltaic devices with graphene based buffer layers for stability and efficiency enhancement.
Auteurs : RBID : pubmed:23571764Abstract
Enhancement of photoconversion efficiency (PCE) and stability in bulk heterojunction (BHJ) plasmonic organic photovoltaic devices (OPVs) incorporating graphene oxide (GO) thin films as the hole transport layer (HTL) and surfactant free Au nanoparticles (NPs) between the GO HTL and the photoactive layers is demonstrated. In particular the plasmonic GO-based devices exhibited a performance enhancement by 30% compared to the devices using the traditional PEDOT:PSS layer. Likewise, they preserved 50% of their initial PCE after 45 h of continuous illumination, contrary to the PEDOT:PSS-based ones that die after 20 h. The performance increase is attributed to the improved photocurrent and fill factor owing to the enhanced exciton generation rate due to NP-induced plasmon absorption enhancement. Besides this, the stability enhancement can be attributed to limited oxygen and/or indium diffusion from the indium tin oxide (ITO) electrode into the active layer. The industrial exploitation of composite GO/NPs as efficient buffer layers in OPVs is envisaged.
DOI: 10.1039/c3nr00656e
PubMed: 23571764
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Plasmonic organic photovoltaic devices with graphene based buffer layers for stability and efficiency enhancement.</title><author><name sortKey="Stratakis, Emmanuel" uniqKey="Stratakis E">Emmanuel Stratakis</name><affiliation wicri:level="1"><nlm:affiliation>Center of Materials Technology and Photonics & Electrical Engineering Department, School of Applied Technology, Technological Educational Institute (TEI) of Crete, Heraklion, 71004, Crete, Greece.</nlm:affiliation><country xml:lang="fr">Grèce</country><wicri:regionArea>Center of Materials Technology and Photonics & Electrical Engineering Department, School of Applied Technology, Technological Educational Institute (TEI) of Crete, Heraklion, 71004, Crete</wicri:regionArea></affiliation></author><author><name sortKey="Stylianakis, Minas M" uniqKey="Stylianakis M">Minas M Stylianakis</name></author><author><name sortKey="Koudoumas, Emmanuel" uniqKey="Koudoumas E">Emmanuel Koudoumas</name></author><author><name sortKey="Kymakis, Emmanuel" uniqKey="Kymakis E">Emmanuel Kymakis</name></author></titleStmt><publicationStmt><date when="2013">2013</date><idno type="doi">10.1039/c3nr00656e</idno><idno type="RBID">pubmed:23571764</idno><idno type="pmid">23571764</idno><idno type="wicri:Area/Main/Corpus">000694</idno><idno type="wicri:Area/Main/Curation">000694</idno><idno type="wicri:Area/Main/Exploration">000466</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Enhancement of photoconversion efficiency (PCE) and stability in bulk heterojunction (BHJ) plasmonic organic photovoltaic devices (OPVs) incorporating graphene oxide (GO) thin films as the hole transport layer (HTL) and surfactant free Au nanoparticles (NPs) between the GO HTL and the photoactive layers is demonstrated. In particular the plasmonic GO-based devices exhibited a performance enhancement by 30% compared to the devices using the traditional PEDOT:PSS layer. Likewise, they preserved 50% of their initial PCE after 45 h of continuous illumination, contrary to the PEDOT:PSS-based ones that die after 20 h. The performance increase is attributed to the improved photocurrent and fill factor owing to the enhanced exciton generation rate due to NP-induced plasmon absorption enhancement. Besides this, the stability enhancement can be attributed to limited oxygen and/or indium diffusion from the indium tin oxide (ITO) electrode into the active layer. The industrial exploitation of composite GO/NPs as efficient buffer layers in OPVs is envisaged.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">23571764</PMID><DateCreated><Year>2013</Year><Month>05</Month><Day>03</Day></DateCreated><DateCompleted><Year>2013</Year><Month>12</Month><Day>09</Day></DateCompleted><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">2040-3372</ISSN><JournalIssue CitedMedium="Internet"><Volume>5</Volume><Issue>10</Issue><PubDate><Year>2013</Year><Month>May</Month><Day>21</Day></PubDate></JournalIssue><Title>Nanoscale</Title><ISOAbbreviation>Nanoscale</ISOAbbreviation></Journal><ArticleTitle>Plasmonic organic photovoltaic devices with graphene based buffer layers for stability and efficiency enhancement.</ArticleTitle><Pagination><MedlinePgn>4144-50</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1039/c3nr00656e</ELocationID><Abstract><AbstractText>Enhancement of photoconversion efficiency (PCE) and stability in bulk heterojunction (BHJ) plasmonic organic photovoltaic devices (OPVs) incorporating graphene oxide (GO) thin films as the hole transport layer (HTL) and surfactant free Au nanoparticles (NPs) between the GO HTL and the photoactive layers is demonstrated. In particular the plasmonic GO-based devices exhibited a performance enhancement by 30% compared to the devices using the traditional PEDOT:PSS layer. Likewise, they preserved 50% of their initial PCE after 45 h of continuous illumination, contrary to the PEDOT:PSS-based ones that die after 20 h. The performance increase is attributed to the improved photocurrent and fill factor owing to the enhanced exciton generation rate due to NP-induced plasmon absorption enhancement. Besides this, the stability enhancement can be attributed to limited oxygen and/or indium diffusion from the indium tin oxide (ITO) electrode into the active layer. The industrial exploitation of composite GO/NPs as efficient buffer layers in OPVs is envisaged.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Stratakis</LastName><ForeName>Emmanuel</ForeName><Initials>E</Initials><Affiliation>Center of Materials Technology and Photonics & Electrical Engineering Department, School of Applied Technology, Technological Educational Institute (TEI) of Crete, Heraklion, 71004, Crete, Greece.</Affiliation></Author><Author ValidYN="Y"><LastName>Stylianakis</LastName><ForeName>Minas M</ForeName><Initials>MM</Initials></Author><Author ValidYN="Y"><LastName>Koudoumas</LastName><ForeName>Emmanuel</ForeName><Initials>E</Initials></Author><Author ValidYN="Y"><LastName>Kymakis</LastName><ForeName>Emmanuel</ForeName><Initials>E</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanoscale</MedlineTA><NlmUniqueID>101525249</NlmUniqueID><ISSNLinking>2040-3364</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>4</Month><Day>11</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>4</Month><Day>11</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>4</Month><Day>11</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1039/c3nr00656e</ArticleId><ArticleId IdType="pubmed">23571764</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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